FP50R07U1E4数据手册分立半导体产品的晶体管-IGBT-模块规格书PDF

描述 Description

650V  SmartPIM1 IGBT module with trench/fieldstop IGBT4, Emitter Controlled Diode, NTC and PressFIT Contact Technology

特性 Features

·Increased blocking voltage capability to 650V
·High Short Circuit Capability
·Self Limiting Short Circuit Current
·Low V Cesat
·T vj op = 150°C
·Al 2O 3 Substrate with Low Thermal Resistance
·Rugged Duplex frame construction

应用 Application

      Select our 2EDL23I06PJ EiceDRIVER™ IC as a compact Gate Driver solution for your IGBT Module. (Evalboard available)Optimize your application with an EiceDRIVER™ Enhanced HV Gate Driver IC. FP50R07U1E4Data Sheet (1.4 MB, EN/CN)EN/DEEN/JAParametricFP50R07U1E4Configuration PIM Three Phase Input RectifierIC(nom) / IF(nom)  50.0A VCE(sat)(Tvj=25°C typ) 1.55V VF(Tvj=25°C typ) 1.55V Housing SmartPIM 1Dimensions(width) 44.0mm Dimensions(length) 69.5mm Data SheetTitleSizeDateVersionFP50R07U1E4 (chinese/english)EN/CNEN/DEEN/JA1.4 MB19 三月 201303_00Product BrochureTitleSizeDateVersion1EDI EiceDRIVER™ Compact 300 milEN216 KB09 五月 201601_00Application NotesTitleSizeDateVersionIndustrial IGBT Modules Explanation of Technical InformationENJA2.2 MB03 十二月 201501_02利用单极栅电压驱动IGBTCNEN384 KB03 十一月 201501_00Assembly Instructions Smart1 ModulesENDE1.5 MB22 十月 2009电力电子模块内部NTC的使用CNEN586 KB26 十一月 2013Application Note IGBT Definition of Junction TemperatureEN84 KB09 四月 2009等效热路模型CNEN500 KB25 十一月 2013如何正确计算并最大限度减小 IGBT 的死区时间CNEN1.5 MB26 八月 2013Application of screen print templates to paste thermal grease within IGBT modulesEN489 KB10 二月 2014Aging stability of various heatconducting pastes for use with modules without baseplatesEN111 KB10 二月 2014Series connection of IGBTsEN28 KB10 二月 2014Paralleling of IGBTsEN28 KB10 二月 2014Product BriefTitleSizeDateVersionSmartPIM and SmartPACK - Self-acting PressFIT assemblyEN168 KB27 四月 201606_00EditorialsTitleSizeDateVersionCorrelating NTC-Reading and Chip-Temperature in Power Electronic ModulesEN297 KB04 十一月 201501_00Self acting PressFIT moduleEN624 KB31 一月 2011650V IGBT4: The optimized device for large current modules with 10 μs short-circuit withstand timeEN191 KB31 一月 2011The challenge of accurately analyzing thermal resistancesEN1.1 MB31 五月 2014Application BrochureTitleSizeDateVersionSolutions for Industrial DrivesEN3.4 MB15 五月 201710_00Solutions for Uninterruptible Power Supply (UPS) SystemsEN3.4 MB15 五月 201709_00Product Selection GuideTitleSizeDateVersionSelection Guide - Industrial and general purpose gate driver ICsEN3.5 MB15 五月 201701_00Product CatalogueTitleSizeDateVersionShort Form Catalog - May 2017EN2.9 MB12 五月 201703_00Material Content Data SheetTitleSizeDateVersionMCDS - Smart 1EN38 KB06 一月 201403_00销售产品名称FP50R07U1E4OPNFP50R07U1E4BPSA1产品状态not for new design在线订购封装名称AG-SMART1-1无铅产品no无卤no通过无铅认证yes包装规格30包装类型TRAYSimulation ToolTitleSizeDateVersionIPOSIMEN2.7 MB09 十二月 201607_09Package DataTitleSizeDateVersionFP50R07U1E4 | SmartPIM1 module | AG-SMART1-1-1EN631 KB11 四月 201601_00查找您的问题的答案很遗憾，您的浏览器不支持嵌入式框架(iframe)。您可以点击此处查看嵌入式页面。英飞凌欢迎您的评论及咨询。如果您对我们的产品有任何问题，请填写下面的表格。您的电子邮件将被转发给相关的负责人，他们会尽快与您联系。按下“提交“按钮后，您可以添加与咨询相关的附件。名*姓*电子邮件*电话公司*公司网址 (URL)行业*[请选择]AUTOMOTIVECHIP CARDCOMMUNICATIONCONSUMERDATA PROCESSINGDISTRIBUTION PARTNERINDUSTRIALELECTRONIC MANUFACTURING SERVICES (EMS)EDUCATION/ACADEMICOTHERNONE其他行业国家*[请选择]AfghanistanAlbaniaAlgeriaAmerican SamoaAndorraAngolaAnguillaAntarcticaAntigua and BarbudaArgentinaArmeniaArubaAustraliaAustriaAzerbaijanBahamasBahrainBangladeshBarbadosBelarusBelgiumBelizeBeninBermudaBhutanBoliviaBonaire, Sint Eustatius and SabaBosnia and HerzegovinaBotswanaBouvet 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简介

FP50R07U1E4属于分立半导体产品的晶体管-IGBT-模块。由制造生产的FP50R07U1E4晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。