FP50R07N2E4中文资料IGBT模块数据手册Infineon规格书

描述 Description

EconoPIM™ 2 650V three phase PIM IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC

特性 Features

• Increased blocking voltage capability to 650V
• High Short Circuit Capability, Self Limiting Short Circuit Current
• T(vj op) = 150°C
• V (CEsat) with positive Temperature Coefficient
• Integrated NTC temperature sensor
• Isolated Base Plate
• Copper Base Plate
• Solder Contact Technology

优势:
• Compact module concept
• Optimized customer’s development cycle time and cost
• Configuration flexibility

简介

FP50R07N2E4属于分立半导体产品的晶体管-IGBT-模块。由制造生产的FP50R07N2E4晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。