FP35R12U1T4中文资料IGBT模块数据手册Infineon规格书

描述 Description

1200V  SmartPIM 1 IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology

特性 Features

• Low Switching Losses
• Trench IGBT 4
• T(vj io) = 150°C
• Low V(cesat)
• AI(2)O(3) Substrate for Low Thermal Resistance
• Rugged Duplex frame construction
• Self-acting PressFIT Assembly

优势:
• Safe and simple mounting process
• Reduced assembly time
• Reliable connection of module Pins and PCB
• Flexible mounting possibilities

简介

FP35R12U1T4属于分立半导体产品的晶体管-IGBT-模块。由制造生产的FP35R12U1T4晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。