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ICE22N60

N-ChannelEnhancementModeMOSFET

ICEMOS

Icemos Technology

ICE22N60

N-ChannelEnhancementModeMOSFET

MICROSS

Micross Components

ICE22N60W

N-ChannelEnhancementModeMOSFET

ICEMOS

Icemos Technology

ICE22N60W

N-ChannelEnhancementModeMOSFET

MICROSS

Micross Components

IRF22N60

N-ChannelPowerMOSFET

NELLSEMINell Semiconductor Co., Ltd

尼尔半导体尼尔半导体股份有限公司

IRFP22N60K

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.28Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFP22N60K

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive   Requirement •ImprovedGate,AvalancheandDynamicdV/dt   Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage   andCurrent •EnhancedBodyDiodedV/dtCapability •ComplianttoRoHSDirective2002/95/EC BENEFITS

VishayVishay Siliconix

威世科技威世科技半导体

IRFP22N60K

SMPSMOSFET

Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EnhancedBodyDiodedv/dtCapability Applications •HardSwitchingPrimaryorPFSSwitch •SwitchM

IRF

International Rectifier

IRFP22N60K

PowerMOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent •EnhancedbodydiodedV/dtcapability •Materialcategorization:fordefinitionsofcompliance ple

VishayVishay Siliconix

威世科技威世科技半导体

IRFP22N60KPBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive   Requirement •ImprovedGate,AvalancheandDynamicdV/dt   Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage   andCurrent •EnhancedBodyDiodedV/dtCapability •ComplianttoRoHSDirective2002/95/EC BENEFITS

VishayVishay Siliconix

威世科技威世科技半导体

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