首页 >FP22N60K>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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N-ChannelEnhancementModeMOSFET | ICEMOS Icemos Technology | ICEMOS | ||
N-ChannelEnhancementModeMOSFET | MICROSS Micross Components | MICROSS | ||
N-ChannelEnhancementModeMOSFET | ICEMOS Icemos Technology | ICEMOS | ||
N-ChannelEnhancementModeMOSFET | MICROSS Micross Components | MICROSS | ||
N-ChannelPowerMOSFET | NELLSEMINell Semiconductor Co., Ltd 尼尔半导体尼尔半导体股份有限公司 | NELLSEMI | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.28Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •EnhancedBodyDiodedV/dtCapability •ComplianttoRoHSDirective2002/95/EC BENEFITS | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SMPSMOSFET Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EnhancedBodyDiodedv/dtCapability Applications •HardSwitchingPrimaryorPFSSwitch •SwitchM | IRF International Rectifier | IRF | ||
PowerMOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent •EnhancedbodydiodedV/dtcapability •Materialcategorization:fordefinitionsofcompliance ple | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •EnhancedBodyDiodedV/dtCapability •ComplianttoRoHSDirective2002/95/EC BENEFITS | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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