쩍-Watt HFET

Product Description The FP1189 is a high performance ½-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface-mount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1-dB compression, while pro

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WJCI

1/2 - Watt HFET

Product Description The FP1189 is a high performance ½-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface-mount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1-dB compression, while pro

文件：517.26 Kbytes 页数：12 Pages

WJCI

1/2 watt HFET

Product Description\nThe  FP1189  is  a  high  performance  ½-Watt  HFET (Heterostructure  FET)  in  a  low-cost  SOT-89  surface mount  package.   This  device  works  optimally  at  a  drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance  and  an  output  power  of  +27  dBm  at •  50 – 4000 MHz\n•  +27 dBm P1dB\n•  +40 dBm Output IP3\n•  High Drain Efficiency\n•  20.5 dB Gain @ 900 MHz\n•  Lead-free/Green/RoHS compliantSOT-89 Package\n•  MTTF 100 Years;

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