FP1189-PCB-900中文资料1/2 watt HFET数据手册Qorvo规格书

描述 Description

Product Description
The  FP1189  is  a  high  performance  ½-Watt  HFET (Heterostructure  FET)  in  a  low-cost  SOT-89  surface mount  package.   This  device  works  optimally  at  a  drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance  and  an  output  power  of  +27  dBm  at  1-dB compression, while providing 20.5 dB gain at 900 MHz.Product

特性 Features

•  50 – 4000 MHz
•  +27 dBm P1dB
•  +40 dBm Output IP3
•  High Drain Efficiency
•  20.5 dB Gain @ 900 MHz
•  Lead-free/Green/RoHS compliantSOT-89 Package
•  MTTF 100 Years