首页 >FP044>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NChannelPowerMOSFETwithextremelylowRDS(on) | GSG Gunter Seniconductor GmbH. | GSG | ||
NChannelPowerMOSFETFORLOGICDRIVER | GSG Gunter Seniconductor GmbH. | GSG | ||
GaAsMMICI/QMIXERMODULE15-23GHz | Hittite Hittite Microwave Corporation | Hittite | ||
1/3-inchCCDImageSensorforNTSCColorCamera Description TheICX054AKisaninterlineCCDsolid-stateimagesensorsuitableforNTSC1/3-inchcolorvideocameras.HighsensitivityisachievedthroughtheadoptionofYe,Cy,MgandGcomplementarycolormosaicfiltersandHAD(Hole-AccumulationDiode)sensors. Thischipfeaturesafieldper | SonySony Semiconductor Solutions Group 索尼 | Sony | ||
N-ChannelMOSFETTransistor •DESCRITION •UltraLowOn-resistance •FastSwitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤20mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
RepetitiveAvalancheRatings | IRF International Rectifier | IRF | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-204AA/AE) ProductSummary TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever | IRF International Rectifier | IRF | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
SimpleDriveRequirements DESCRIPTION •DrainCurrentID=44A@TC=25℃ •DrainSourceVoltage- :VDSS=60V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max) •SimpleDriveRequirements APPLICATIONS •Switchingpowersupplies •Motorcontrols,InvertersandChoppers •Audioamplifiersandhighen | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB |
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