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FXT453

NPNSILICONPLANARMEDIUMPOWERTRANSISTOR

FEATURES *100VoltVCEO *1Ampcontinuouscurrent *Ptot=1Watt

Zetex

Zetex Semiconductors

GL453

BIDIRECTIONALEMISSIONTYPEINFRAREDLIGHTEMITTINGDIODE

BidirectionalEmissionTypeInfraredLightEmittingDiode Applications 1.Lightsourcefortape-enddetectorsofVHStypeVCRs

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

GL453

BidirectionalEmissionTypeInfraredEmittingDiode

BidirectionalEmissionTypeInfraredLightEmittingDiode Applications 1.Lightsourcefortape-enddetectorsofVHStypeVCRs

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

HCPL-M453

SmallOutline,5Lead,HighSpeedOptocouplers

Description ThesesmalloutlinehighCMR,highspeed,diode-transistoroptocouplersaresinglechanneldevicesinafiveleadminiaturefootprint.TheyareelectricallyequivalenttothefollowingAgilentoptocouplers: TheSO-5JEDECregistered(MO-155)packageoutlinedoesnotrequire“through

HPAgilent(Hewlett-Packard)

安捷伦科技安捷伦科技有限公司

HWS453

GaAsDC-6GHzDPDTSwitch

Description TheHWS453isaGaAsPHEMTMMICDPDTswitchoperatingatDC-6GHzinalowcostminiatureQFN12L(3x3mm)plasticlead(Pb)freepackage.TheHWS453featureslowinsertionlossandhighisolationwithverylowDCpowerconsumption.ThisswitchcanbeusedinIEEE802.11a/b/gWLANsy

HWHexawave, Inc

汉威光电汉威光电股份有限公司

IRF453

N-CHANNELPOWERMOSFETS

FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv

SamsungSamsung semiconductor

三星三星半导体

IRF453

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFP453

N-CHANNELPOWERMOSFETS

SamsungSamsung semiconductor

三星三星半导体

IRFP453

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFP453

SEMICONDUCTORS

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