MOSFET

低导通电阻\n高可靠性\n驱动要求简单\n \n产品封装\n封装形式:TO-263\n;

FNK-TECH

乾野微纳

600V/60A Trench Field Stop IGBT

Features ◼ 600V,60A ◼ VCE(sat)(typ.)=1.85V@VGE=15V,IC=60A ◼ High speed switching ◼ Higher system efficiency ◼ Soft current turn-off waveforms ◼ Square RBSOA using NPT technology

文件：1.93489 Mbytes 页数：8 Pages

LUGUANG

鲁光电子

600V insulated gate bipolar transistor

文件：902.57 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

600V insulated gate bipolar transistor

文件：902.57 Kbytes 页数：7 Pages

HMSEMI

华之美半导体