丝印：W3；Package：SMT5；General purpose (dual transistors)

Features 1) Two 2SC3906K chips in an SMT package. 2) High breakdown voltage.

文件：54.27 Kbytes 页数：1 Pages

ROHM

罗姆

丝印：W3；Package：SOT-153；General purpose

■ Features ● High breakdown voltage ● Power dissipation: PC=300mW ● Collector Curren: IC=50mA

文件：88.16 Kbytes 页数：1 Pages

KEXIN

科信电子

isc N-Channel MOSFET Transistor

• FEATURES • With TO-247 packaging • With low gate drive requirements • Low switching loss • Low on-state resistance • Easy to drive • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：326.43 Kbytes 页数：2 Pages

ISC

无锡固电

功率MOSFET 600V-700V

FUJI

富士通

功率MOSFET 600V-700V

FUJI

富士通

功率MOSFET 600V-700V

FUJI

富士通

包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS GP NPN 120V 5 PIN

Rohm Semiconductor