20V P-Channel Enhancement Mode MOSFET

Features • RDS(ON) ≦ 110mΩ@VGS =-4.5V • RDS(ON) ≦ 150mΩ@VGS =-2.5V • Super high density cell design for extremely low RDS(ON) • In compliance with EU RoHS 2002/95/EC directives. • Suffix -H indicates Halogen-free part, ex.FMS2301-H. Case : Molded plastic, SOT-23

文件：563.81 Kbytes 页数：8 Pages

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P-Channel SMD MOSFET

Features • Suffix -H indicates Halogen-free part, ex.FMS2301A-H. • RDS(ON) ≦ 75mΩ@VGS =-4.5V • RDS(ON) ≦ 95mΩ@VGS =-2.5V • Super high density cell design for extremely low RDS(ON) • In compliance with EU RoHS 2002/95/EC directives. • Exceptional on-resistance and maximum DC current capabilit

文件：377.61 Kbytes 页数：8 Pages

FORMOSA

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30V P-Channel Enhancement Mode MOSFET

Features ● RDS(ON) ≦ 75mΩ@VGS =-10V ● RDS(ON) ≦ 100mΩ@VGS =-4.5V ● Super high density cell design for extremely low RDS(ON) ● In compliance with EU RoHS 2002/95/EC directives. ● Suffix -H indicates Halogen-free part, ex.FMS2303-H. Case : Molded plastic, SOT-23

文件：1.23198 Mbytes 页数：8 Pages

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Low Loss SPDT Reflective pHEMT MMIC Switch

文件：395.28 Kbytes 页数：3 Pages

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Low Loss SPDT Reflective pHEMT MMIC Switch

文件：395.28 Kbytes 页数：3 Pages

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SPDT Reflective pHEMT MMIC Switch

文件：155.44 Kbytes 页数：4 Pages

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SP3T Reflective pHEMT MMIC Switch

文件：635.33 Kbytes 页数：4 Pages

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SP3T Reflective pHEMT MMIC Switch

文件：635.33 Kbytes 页数：4 Pages

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SP3T Reflective pHEMT MMIC Switch

文件：588.39 Kbytes 页数：3 Pages

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SP3T Reflective pHEMT MMIC Switch

文件：588.39 Kbytes 页数：3 Pages

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