N-CHANNEL SILICON POWER MOSFET

文件：609.75 Kbytes 页数：5 Pages

FUJI

富士通

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 28.4A, 500V, RDS(on) = 0.16Ω @VGS = 10 V • Low gate charge ( typical 110 nC) • Low Crss ( typical 60 pF) • Fast switching

文件：762.48 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：647.34 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

500V N-Channel MOSFET

文件：826.32 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体