FMR23N60ES说明书PDF资料原装现货富士通-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FMR23N60ES	文件：576.1 Kbytes Page：5 Pages	N-CHANNEL SILICON POWER MOSFET 文件：576.1 Kbytes 页数：5 Pages	FUJI 富士通	FUJI
FMR23N60ES	文件：300 bytes Page：1 Pages	功率MOSFET 600V-700V	FUJI 富士通	FUJI
G23N60UF	文件：607.18 Kbytes Page：8 Pages	Ultra-Fast IGBT General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low 文件：607.18 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
G23N60UFD	文件：607.18 Kbytes Page：8 Pages	Ultra-Fast IGBT General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low 文件：607.18 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
IXFH23N60Q	文件：580.04 Kbytes Page：4 Pages	HiPerFET Power MOSFETs Q-Class 文件：580.04 Kbytes 页数：4 Pages	IXYS 艾赛斯	IXYS

更多FMR23N60ES供应商更新时间2026-2-3 14:02:00