Ultra-Fast IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low

文件：607.18 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

HiPerFET Power MOSFETs Q-Class

文件：580.04 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.32Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：337.83 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs Q-Class

文件：580.04 Kbytes 页数：4 Pages

IXYS

艾赛斯