0 to 11 dB Step Attenuator with a 1 dB Step N Female Interface Rated Up to 3 GHz and Up to 5 Watts in a Push Button Design

Features • 1, 2, 3, and 5 dB step buttons • 0 to 11 dB Attenuation • 1.5:1 VSWR Maximum • 0.7 dB Attenuation Accuracy Maximum • N-Type Female Connectors • Maximum Power 5 Watts (CW)

文件：317.61 Kbytes 页数：3 Pages

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NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO = 17.5V * 5 Amp Continuous Current * 20 Amp Pulse Current * Low Saturation Voltage * High Gain * Extremely Low Equivalent On-resistance; RCE(sat) = 50mΩ at 5A

文件：132.01 Kbytes 页数：3 Pages

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DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS

Summary BVCEO > 17.5V IC(cont) = 5A VCE(sat) Description Advanced process capability has been used to achieve this high performance device. Combining two NPN transistors in the SM-8 package provides a compact solution for the intended applications. Features • Dual NPN device

文件：57.03 Kbytes 页数：3 Pages

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NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEV=50V * Very Low Saturation Voltages * High Gain * 20 Amps pulse current APPLICATIONS * LCD Backlight Convertors * Emergency Lighting * DC-DC Convertors

文件：105.55 Kbytes 页数：4 Pages

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