35 dB min Gain, Temperature Compensated Low Noise Amplifier, 18 dBm P1dB Operating from 26.5 GHz to 40 GHz with 2.92mm and Heatsink

Features: • Temperature Compensated GaAs FET Amplifier Design with Integrated Heatsink • Frequency Range 26.5 GHz to 40 GHz • PIN Diode Compensation Circuitry • Small Signal Gain 42 dB typ • Operational Temperature Range -55°C to +85°C • Noise Figure 6.8 dB max • Output P1dB +18 dBm mi

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FAIRVIEW

SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY

GENERAL DESCRIPTION The ISD5100 ChipCorder Series provide high quality, fully integrated, single-chip Record/Playback solutions for 1- to 16-minute messaging applications that are ideal for use in cellular phones, automotive communications, GPS/navigation systems and other portable products. The

文件：612.1 Kbytes 页数：88 Pages

WINBOND

华邦电子

Ka-Band 3-Stage Self Bias Low Noise Amplifier

DESCRIPTION The MGFC5108 is a GaAs MMIC chip especially designed for 24.0 ~ 27.0 GHz band Low Noise Amplifier.(LNA) . FEATURES ● RF frequency : 24.0 to 27.0 GHz ● Super Low Noise NF=2.5dB (TYP.) ● Single voltage operation

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MITSUBISHI

三菱电机

PHOTOMULTlPLlER TUBE

28 mm (1-1/8 Inch) Transmission Mode S–1 Photocathode, Side–on Type FEATURES ● Wide Photocathode ● High Infrared Sensitivity ● Excellent Spatial Uniformity ● Fast Time Response APPLICATIONS ● Near Infrared Spectrophotometer ● Raman Spectrophotometer ● Photo Luminescence Measurement

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HAMAMATSUHamamatsu Photonics Co.,Ltd.

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