Variable Gain Control Amplifier, 2 GHz to 6 GHz, GaAs FET, 40 dB Gain, 20 dB Variable Gain, 15 dBm P1dB, SMA

Features: • Variable Gain Amplifier • Frequency Range 2 GHz to 6 GHz • GaAs FET Semiconductor Technology • Small Signal Gain 42 dB Typ • Variable Gain 20 dB • Output P1dB +16 dBm • Noise Figure 2.0 dB • DC Voltage +12 to +15 Vdc • DC Control Voltage 0V to +5V • 50 Ohm Design • 0°C to +

文件：734.71 Kbytes 页数：5 Pages

FAIRVIEW

MicroPower, Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7003 is a three-terminal Hall Effect sensor device with an output driver. The device is using CMOS process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis

文件：119.32 Kbytes 页数：2 Pages

MPOWERMajor-Power Technology Co., LTD.

久昌科技久昌科技股份有限公司

TRI-BAND GSM/DCS/PCS LNA

DESCRIPTION The STB7003 is a tri-band LNA designed for GSM/DCS/ PCS applications. The GC pin sets the LNA gain levels. The innovative architecture implemented allows to reach very low current consumption. LNA1 works at 0.9-1.0 GHz and LNA2 over the 1.8-2GHz frequency range. • SUPPLY VOLTAGE 2.8V

文件：221.44 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

MOSFET POWER AMPLIFIER

文件：134.44 Kbytes 页数：8 Pages

TI

德州仪器