FQI630

200VN-ChannelMOSFET

200VN-ChannelMOSFET

FQP630

200VN-ChannelMOSFET

Features •9A,200V,RDS(on)=0.4Ω@VGS=10V •Lowgatecharge(typical19nC) •LowCrss(typical35pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQP630

200VN-ChannelMOSFET

Features •9A,200V,RDS(on)=0.4Ω@VGS=10V •Lowgatecharge(typical19nC) •LowCrss(typical35pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQP630TSTU

200VN-ChannelMOSFET

Features •9A,200V,RDS(on)=0.4Ω@VGS=10V •Lowgatecharge(typical19nC) •LowCrss(typical35pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQPF630

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FQU630

200VN-ChannelMOSFET

FQU630

200VLOGICN-ChannelMOSFET

FQU630

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

G630

MicroprocessorResetIC

G630J

N-ChannelEnhancementModePowerMOSFET

Description TheG630Jusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters