首页 >FM560P-T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
ChipSchottkyBarrierDiodes-Siliconepitaxialplanertype Siliconepitaxialplanertype Features ●PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-OUtilizingFlameRetardantEpoxyMoldingCompound. ●Forsurfacemountedapplications. ●ExceedsenvironmentalstandardsofMIL-S-19500/228 ●Lowleakagecurrent. | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | FORMOSA | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERVOLTAGERANGE20to200VoltsCURRENT5.0Ampere FEATURES *Idealforsurfacemountedapplications *Lowleakagecurrent *P/NsuffixVmeansHalogen-free *P/NsuffixVmeansAEC-Q101qualified,e.g:FM520V | RECTRON Rectron Semiconductor | RECTRON | ||
PNPSILICONPLANARHIGHVOLTAGETRANSISTOR FEATURES *ExcellenthFEcharacterisristicsuptoIC=50mA *LowSaturationvoltages | Zetex Zetex Semiconductors | Zetex | ||
PNPSILICONPLANARHIGHVOLTAGETRANSISTOR Features •BVCEO>-500V •IC=-150mAhighContinuousCollectorCurrent •ICMUpto500mAPeakPulseCurrent •ExcellenthFECharacteristicsuptoIC=100mA •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifiedto | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
A0.9-AConstantCurrentSupplywithPFCfor100-WLED | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
500VPNPHIGHVOLTAGETRANSISTORINSOT23 Features BVCEO>-500V IC=-150mAhighContinuousCollectorCurrent ICMUpto-500mAPeakPulseCurrent ExcellenthFECharacteristicsuptoIC=-100mA TotallyLead-Free&FullyRoHScompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheFMMT560Qissuitableforaut | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
500VPNPHIGHVOLTAGETRANSISTORINSOT23 Features BVCEO>-500V IC=-150mAhighContinuousCollectorCurrent ICMUpto-500mAPeakPulseCurrent ExcellenthFECharacteristicsuptoIC=-100mA TotallyLead-Free&FullyRoHScompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheFMMT560Qissuitableforaut | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
500VPNPHIGHVOLTAGETRANSISTORINSOT23 Features BVCEO>-500V IC=-150mAhighContinuousCollectorCurrent ICMUpto-500mAPeakPulseCurrent ExcellenthFECharacteristicsuptoIC=-100mA TotallyLead-Free&FullyRoHScompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheFMMT560Qissuitableforaut | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
PNPSILICONPLANARHIGHVOLTAGETRANSISTOR Features •BVCEO>-500V •IC=-150mAhighContinuousCollectorCurrent •ICMUpto500mAPeakPulseCurrent •ExcellenthFECharacteristicsuptoIC=100mA •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifiedto | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
500VPNPHIGHVOLTAGETRANSISTOR | DIODESDiodes Incorporated 美台半导体 | DIODES |
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