首页 >FM360B-T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERVOLTAGERANGE20to200VoltsCURRENT3.0Ampere | RECTRON Rectron Semiconductor | RECTRON | ||
ChipSchottkyBarrierRectifier | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | FORMOSA | ||
ChipSchottkyBarrierRectifier | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | FORMOSA | ||
ChipSchottkyBarrierRectifier | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | FORMOSA | ||
SEVENSEGMENTDISPLAYS | QT QT Optoelectronics | QT | ||
ADJUSTABLEVIDEODELAYLINES | FaradayFaraday Technology 智原科技智原科技股份有限公司 | Faraday | ||
SchottkyBarrierRectifier,SurfaceMount Features •LowForwardVoltageDrop: ♦FSV340FP:0.52VMaximumat3A,TA=25°C ♦FSV360FP:0.65VMaximumat3A,TA=25°C •LargerCathodePadforImprovedPowerDissipation •UltraThinProfile−MaximumHeightof1.0mm •HighSurgeCapacity •ULFlammability94V−0Classification • | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadl | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SY | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin | Intersil Intersil Corporation | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin | Intersil Intersil Corporation | Intersil |
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