256Kb FRAM Serial Memory

[Ramtron International Corporation] Description The FM24C256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 45

文件：102.64 Kbytes 页数：13 Pages

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256Kb FRAM Serial Memory

文件：98.1 Kbytes 页数：12 Pages

RAMTRON

256Kb FRAM serial memory. 5V operation

Infineon

英飞凌

256 KBit 2-Wire Bus Interface Serial EEPROM with Write Protect

General Description The FM24C256/C256L/C256LZ devices are 256 Kbits CMOS nonvolatile electrically erasable memory. These devices offer the designer different low voltage and low power options. They conform to all requirements in the Extended IIC 2-wire protocol. Furthermore, they are designed to

文件：89.12 Kbytes 页数：12 Pages

Fairchild

仙童半导体

Low-voltage Operation

文件：584.16 Kbytes 页数：15 Pages

HMSEMI

华之美半导体

262,144-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C256 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The IS24C256 contains a memory array of 256K-bits (32,768 x 8), and is further subdivided into 512 pages of 64 bytes each for PageWrite mode. This EEPROM is offered in wide

文件：51.93 Kbytes 页数：12 Pages

ISSI

矽成半导体