Low-voltage Operation

文件：584.16 Kbytes 页数：15 Pages

HMSEMI

华之美半导体

262,144-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C256 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The IS24C256 contains a memory array of 256K-bits (32,768 x 8), and is further subdivided into 512 pages of 64 bytes each for PageWrite mode. This EEPROM is offered in wide

文件：51.93 Kbytes 页数：12 Pages

ISSI

矽成半导体

128K-bit/ 256K-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C128A/256A is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The IS24C128A is 128K-bit (16Kx8) and the IS24C256A is 256K-bit (32Kx8). These EEPROM are offered in a wide operating voltage range of 1.8V to 5.5V to be compatible

文件：125.2 Kbytes 页数：17 Pages

ISSI

矽成半导体

Bi-directional Data Transfer Protocol

„ Description LR24C128/LR24C256 provides 131,072/262,144 bits ofserial electrically erasable and programmable read-only memory(EEPROM) organized as 16,384/32,768 words of 8 bits each. The device is optimized for usein many industrial and commercial applications where low-power and low-voltage o

文件：607.48 Kbytes 页数：14 Pages

LRC

乐山无线电