首页 >FLM1011-4C>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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10.7-11.7GHz,4WInternallyMatchedPowerFET 10.7-11.7GHz,4WInternallyMatchedPowerFET •10.7-11.7GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM •EIAFEATURESHIGHPAE(30TYPICAL) •EIBFEATURESHIGHIP3(49dBmTYPICAL) •+36.5/+35.5dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB •9/8dBTYPICALG1dBPOWERGAINFOREIA/EIB • | Excelics Excelics Semiconductor, Inc. | Excelics | ||
10.7-11.7GHz,4WInternallyMatchedPowerFET 10.7-11.7GHz,4WInternallyMatchedPowerFET •10.7-11.7GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM •EIAFEATURESHIGHPAE(30TYPICAL) •EIBFEATURESHIGHIP3(49dBmTYPICAL) •+36.5/+35.5dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB •9/8dBTYPICALG1dBPOWERGAINFOREIA/EIB • | Excelics Excelics Semiconductor, Inc. | Excelics | ||
10.70-11.70GHz4-WattInternally-MatchedPowerFET FEATURES •10.70–11.70GHzBandwidth •Input/OutputImpedanceMatchedto50Ohms •+36.0dBmOutputPowerat1dBCompression •6.5dBPowerGainat1dBCompression •30PowerAddedEfficiency •-46dBcIM3atPo=25.5dBmSCL •100TestedforDC,RF,andRTH | Excelics Excelics Semiconductor, Inc. | Excelics | ||
10.7-11.7GHzMulti-StagePowerAmplifier | Excelics Excelics Semiconductor, Inc. | Excelics | ||
X,Ku-BandInternallyMatchedFET DESCRIPTION TheFLM1011-4FisapowerGaAsFETthatisinternallymatchedforstandardcommunicationbandstoprovideoptimumpowerandgainina50ohmsystem. Eudyna’sstringentQualityAssuranceProgramassuresthehighestreliabilityandconsistentperformance. FEATURES •HighOutputPower | EUDYNA Eudyna Devices Inc | EUDYNA | ||
N-CHANNELGaAsMESFET 4WX,Ku-BANDPOWERGaAsMESFET DESCRIPTION TheNEZ1011-4EandNEZ1414-4EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhigh outputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwith onlya50Wexternalcircuit.To | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
4WX,Ku-BANDPOWERGaAsMESFET DESCRIPTION TheNEZ1011-4EandNEZ1414-4EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhighoutputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwithonlya50Ωexternalcircuit.Toreducethermalresistancethedevic | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MICROWAVEPOWERGaAsFET FEATURES ■HIGHPOWER P1dB=36.5dBmat10.7GHzto11.7GHz ■HIGHGAIN G1dB=7.5dBat10.7GHzto11.7GHz ■BROADBANDINTERNALLYMATCHEDFET ■HERMETICALLYSEALEDPACKAGE | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MICROWAVEPOWERGaAsFET FEATURES ・BROADBANDINTERNALLYMATCHEDFET ・HIGHPOWER P1dB=36.5dBmat10.7GHzto11.7GHz ・HIGHGAIN G1dB=9.5dBat10.7GHzto11.7GHz ・LOWINTERMODULATIONDISTOTION IM3=-45dBcatPout=24.0dBm SingleCarrierLevel ・HERMETICALLYSEALEDPACKAGE | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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