C-Band Power GaAs FET

DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FEA

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FUJITSU

富士通

C-Band Power GaAs FET

DESCRIPTION\nThe FLC167WF is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.\nFujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.FEATURES\n• Hig • High Output Power: P1dB = 31.8dBm(Typ.)\n• High Gain: G1dB = 7.5dB(Typ.)\n• High PAE: ηadd = 35%(Typ.)\n• Proven Reliability\n• Hermetic Metal/Ceramic Package ;

Fujitsu

富士通

Silicon epitaxial planar type

For switching circuits ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct

文件：49.31 Kbytes 页数：2 Pages

PANASONIC

松下

Single Phase Bridge Rectifier 2.0 Amp

Features: • Ideal for Printed Circuit Board • Surge Overload Rating: 50A (Peak)

文件：18.56 Kbytes 页数：2 Pages

NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

文件：55.13 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体