C-Band Power GaAs FET

DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FEA

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FUJITSU

富士通

C-Band Power GaAs FET

DESCRIPTION\nThe FLC167WF is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.\nFujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.FEATURES\n• Hig • High Output Power: P1dB = 31.8dBm(Typ.)\n• High Gain: G1dB = 7.5dB(Typ.)\n• High PAE: ηadd = 35%(Typ.)\n• Proven Reliability\n• Hermetic Metal/Ceramic Package ;

Fujitsu

富士通

SMD

SAMTEC

美国申泰

上传：北京贝诺电子科技发展有限公司

BGA

GENESIS

晶新微电子

上传：深圳市澳亿芯电子科技有限公司

NA

SUMITOMO

住友商事

上传：深圳市旺财半导体有限公司