FAST RECOVERY BRIDGE RECTIFIERS

FEATURES : * High case dielectric strength of 2000 VDC * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency * Ideal for printed circuit board * Pb / RoHS Free

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EIC

FAST RECOVERY

文件：52.55 Kbytes 页数：2 Pages

EIC

FAST RECOVERY BRIDGE RECTIFIERS

文件：93.78 Kbytes 页数：2 Pages

EIC

IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs

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PANJIT

強茂

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

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POLYFET

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

文件：36.56 Kbytes 页数：2 Pages

POLYFET