丝印：FK1；Package：SOT-23；Fixed and Adjustable Current Limiting Power Distribution Switches

文件：3.94238 Mbytes 页数：38 Pages

Microchip

微芯科技

150 Watt DC-DC Converters

Input voltage ranges from 8…385 V DC 1or 2 outputs up to 48 V DC 4 kV AC I/O electric strength test voltage • Rugged electrical and mechanical design • Fully isolated outputs • Operating ambient temperature range –40...71°C with convection cooling

文件：173.57 Kbytes 页数：4 Pages

POWER-ONE

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ............................................................................... 500V ● rDS (ON) (MAX) ............................................................. 1.13Ω ● ID ........................................................................................

文件：54.86 Kbytes 页数：5 Pages

Mitsubishi

三菱电机

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=35A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.9mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：346.1 Kbytes 页数：3 Pages

ISC

无锡固电

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • VDSS ................................................................................600V • rDS (ON) (MAX) .............................................................. 1.18Ω • ID .......................................................................................

文件：54.31 Kbytes 页数：5 Pages

Mitsubishi

三菱电机

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • VDSS ................................................................................600V • rDS (ON) (MAX) .............................................................. 1.18Ω • ID .......................................................................................

文件：60.28 Kbytes 页数：5 Pages

POWEREX

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.18Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：323.31 Kbytes 页数：2 Pages

ISC

无锡固电

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................450V ● rDS (ON) (MAX) .............................................................. 0.92Ω ● ID .......................................................................................

文件：54.3 Kbytes 页数：5 Pages

Mitsubishi

三菱电机

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................450V ● rDS (ON) (MAX) .............................................................. 0.92Ω ● ID .......................................................................................

文件：60.23 Kbytes 页数：5 Pages

POWEREX

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.92Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：323.24 Kbytes 页数：2 Pages

ISC

无锡固电