FFSB20120A-F085_V01中文资料安森美半导体数据手册PDF规格书

厂商型号	FFSB20120A-F085_V01
功能描述	Silicon Carbide Schottky Diode 1200 V, 20 A
文件大小	316.72 Kbytes
页面数量	6 页
生产厂商	ON Semiconductor
企业简称	ONSEMI【安森美半导体】
中文名称	安森美半导体公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-5-17 23:00:00
人工找货	FFSB20120A-F085_V01价格和库存，欢迎联系客服免费人工找货

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size and cost.

Features

• Max Junction Temperature 175°C

• Avalanche Rated 200 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

• No Reverse Recovery/No Forward Recovery

• AEC−Q101 qualified

Applications

• Automotive HEV−EV Onboard Chargers

• Automotive HEV−EV DC−DC Converters