FFSB20120A-F085中文资料碳化硅（SiC）肖特基二极管- EliteSiC 20A 1200V D1 D2PAK封装数据手册ONSEMI规格书

描述 Description

Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.

特性 Features

• Max Junction Temperature 175°C
• Avalanche Rated 200 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
• AEC−Q101 qualified and PPAP Capable

应用 Application

• Automotive HEV−EV Onboard Chargers
• Automotive HEV−EV DC−DC Converters

简介

FFSB20120A-F085属于分立半导体产品的二极管-整流器-单。由制造生产的FFSB20120A-F085二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。