FF800R12KE7_E

62 mm C-Series module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode

Features •Electricalfeatures -VCES=1200V -ICnom=800A/ICRM=1600A -TRENCHSTOPTMIGBT7 -VCE,satwithpositivetemperaturecoefficient •Mechanicalfeatures -4kVAC1mininsulation -Highcreepageandclearancedistances -Highpowerdensity -Isolatedbaseplate -Pack

FF800R12KE7_E

IGBT 模块

\n优势:\n• Existing packages with higher current capability, allows to increase inverter output power with same frame size\n• Highest power density\n• Avoidance of paralleling of IGBT modules\n• Reduced system costs by simplification of the inverter systems\n• Flexibility and ready for three-level con;

FF800R12KE7

62mmC-SeriesmodulewithTRENCHSTOP™IGBT7andemittercontrolled7diode

Features •Electricalfeatures -VCES=1200V -ICnom=800A/ICRM=1600A -TRENCHSTOPTMIGBT7 -VCE,satwithpositivetemperaturecoefficient •Mechanicalfeatures -Standardhousing -4kVAC1mininsulation -Highcreepageandclearancedistances -Highpowerdensity -Isolate

FF800R12KE7EHPSA1

Infineon/英飞凌
Module

Infineon/英飞凌

FF800R12KE7EHPSA1

Infineon/英飞凌
Module

Infineon/英飞凌