62 mm C-Series module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode

Features • Electrical features - VCES = 1200 V - IC nom = 800 A / ICRM = 1600 A - TRENCHSTOPTM IGBT7 - VCE,sat with positive temperature coefficient • Mechanical features - Standard housing - 4 kV AC 1 min insulation - High creepage and clearance distances - High power density - Isolate

文件：729.17 Kbytes 页数：15 Pages

INFINEON

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IGBT 模块

\n优势:\n• Existing packages with higher current capability, allows to increase inverter output power with same frame size\n• Highest power density\n• Avoidance of paralleling of IGBT modules\n• Reduced system costs by simplification of the inverter systems\n• Flexibility\n• Highest reliability;

Infineon

英飞凌

62 mm C-Series module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode

Features • Electrical features - VCES = 1200 V - IC nom = 800 A / ICRM = 1600 A - TRENCHSTOPTM IGBT7 - VCE,sat with positive temperature coefficient • Mechanical features - 4 kV AC 1 min insulation - High creepage and clearance distances - High power density - Isolated base plate - Pack

文件：691.16 Kbytes 页数：15 Pages

INFINEON

英飞凌

IGBT 模块

\n优势:\n• Existing packages with higher current capability, allows to increase inverter output power with same frame size\n• Highest power density\n• Avoidance of paralleling of IGBT modules\n• Reduced system costs by simplification of the inverter systems\n• Flexibility and ready for three-level con;

Infineon

英飞凌

Package：模块；包装：托盘 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：MEDIUM POWER 62MM AG-62MMHB-711

INFINEON

英飞凌