FDZ206P中文资料仙童半导体数据手册PDF规格书

General Description

Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ206P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra low profile packaging, low gate charge, and low rDS(on).

特性 Features

• –13 A, –20 V.

rDS(on) = 9.5 mW @ VGS = –4.5 V

rDS(on) = 14.5 mW @ VGS = –2.5 V

• Occupies only 14 mm2 of PCB area.

Only 42 of the area of SO-8

• Ultra-thin package: less than 0.80 mm height when mounted to PCB

• 0.65 mm ball pitch

• 3.5 x 4 mm2 footprint

• High power and current handling capability

Applications

• Battery management

• Load switch

• Battery protection