FDV303中文资料翊欧数据手册PDF规格书

General Description

This very high density process is tailored to minimize on-state

resistance at low gate drive conditions. This device is designed

especially for application in battery circuits using either one

lithium or three cadmium or NMH cells. It can be used as an inverter

or for high-efficiency miniature discrete DC/DC

conversion in compact portable electronic devices like cellular

phones and pagers. This device has excellent on-state

resistance even at gate drive voltages as low as 2.5 volts.

特性 Features

VDS (V) = 25V

ID= 2A

RDS(ON)< 28mΩ (VGS = 4.5V)

RDS(ON)< 42mΩ (VGS= 2.7V)

Very low level gate drive requirements allowing direct

operation in 3V circuits. VGS(th) < 1V.

Gate-Source Zener for ESD ruggedness.>6kV

Human Body Model

Compact industry standard SOT-23 surface mount package.