FDS4435A

P-ChannelLogicLevelPowerTrench?줞OSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features •–9A,–30V.RDS(ON)=0.017Ω@VGS=

FDS4435A

P-ChannelLogicLevelPowerTrenchMOSFET

FDS4435A-NL

P-Channel30-V(D-S)MOSFET

FDS4435BZ

30VoltP-ChannelPowerTrenchMOSFET

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench®processthathasbeenespeciallytailoredtominimizetheon-stateresistance. ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers

FDS4435BZ

P-ChannelPowerTrench짰MOSFET-30V,-8.8A,20m廓

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench®processthathasbeenespeciallytailoredtominimizetheon-stateresistance. ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers

FDS4435BZ

-30VP-ChannelMOSFET

GeneralDescription ThisdeviceiswellsuitedforPowerManagementandload switchingapplicationscommoninNotebookComputersand PortableBatteryPacks. Features VDS(V)=-30V ID=-8.8A(VGS=-10V) RDS(ON)

FDS4435BZ

P-ChannelPowerTrenchMOSFET-30V,-8.8A,20mΩ

Features
MaxrDS(on)=20mΩatVGS=-10V,ID=-8.8A
MaxrDS(on)=35mΩatVGS=-4.5V,ID=-6.7A
ExtendedVGSSrange(-25V)forbatteryapplications
HBMESDprotectionlevelof±3.8KVtypical(note3)
HighperformancetrenchtechnologyforextremelylowrDS(on)
Highpowerand

FDS4435BZ-NL

P-Channel30-V(D-S)MOSFET

FDS4435-NL

P-Channel30-V(D-S)MOSFET

FQ4435Q

Plastic-EncapsulateMOSFETS

DESCRIPTION TheFQ4435Qusesadvancedtrenchtechnologytoprovideexcellent RDS(on),shoot-throughimmunity,bodydiodecharacteristicsandultra-lowgate resistance.ThisdeviceisideallysuitedforuseasalowsideswitchinNotebook CPUcorepowerconversion. APPLICATIONS BatteryS