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FDR838P

P-Channel2.5VSpecifiedPowerTrenchTMMOSFET

GeneralDescription TheseP-Channel2.5VspecifiedMOSFETsareproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features •-8A,-20V.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FSE838

ExtraLowCapacitanceLatch-upTVSDiode

FUTUREWAFER

FutureWafer Tech Co.,Ltd

FSE838AT

ExtraLowCapacitanceLatch-upTVSDiode

FUTUREWAFER

FutureWafer Tech Co.,Ltd

FSE838CT

ExtraLowCapacitanceLatch-upTVSDiode

FUTUREWAFER

FutureWafer Tech Co.,Ltd

FT838D

FT838D

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

FT838MBD

HighEfficiencyOff-LineCC/CVSwitch

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

FT838NB

Low-PowerOff-LineCC/CVSwitch

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

KRC838E

EPITAXIALPLANARNPNTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION FEATURES WithBuilt-inBiasResistors. SimplifyCircuitDesign. ReduceaQuantityofPartsandManufacturingProcess.

KECKEC CORPORATION

KEC株式会社

KRC838U

EPITAXIALPLANARNPNTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION FEATURES ●WithBuilt-inBiasResistors. ●SimplifyCircuitDesign. ●ReduceaQuantityofPartsandManufacturingProcess.

KECKEC CORPORATION

KEC株式会社

KSC838

NPN(FMRADIORFAMP,MIX,CONV,OSC,IFAMP)

FMRADIORFAMP,MIX,CONV,OSC,IFAMP HighCurrentGainBanwidthProductft=250MHz(Typ)

SamsungSamsung semiconductor

三星三星半导体

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