GVB352FCX

GVB351000VDCBI-DIRECTIONALCONTACTOR

Features Applications •Gasfilleddesignofferslowerresistancethannon-hermeticswitches resultinginhighersystemefficiencyandlessheatgeneration.MeetIP67 level. •Suppressiongasallowshighfaultinterruptcapabilityandprohibits oxidation---Strongcapabilityofcoolingarc,r

HC352

HardCopyIIIDevice

HF352

SignalandRFRelays

HF352

RFSignalRelays

RFSignalRelays HF3Relay ■Y-Design ■FrequencyrangeDCto3GHz ■Impedance50Ωor75Ω ■Smalldimensions(14.6x7.2x10mm) ■1formCcontact(1changeovercontact) ■Immersioncleanable ■Lowpowerconsumption(≤140mW) Typicalapplications Cablemodemsandlinecards/CATV,Tabs,m

I352HL

Hingedtoppanelfor352HLand352HS

IL352

Optocoupler,PhototransistorOutput,WithBaseConnection

Description TheIL352opticallycoupledisolatorthatfeaturesahighcurrenttransferratio,lowcouplingcapacitanceandhighisolationvoltage.IthasaGaAsinfraredemittingdiodeemitter,whichisopticallycoupledtoasiliconplanarphototransistordetector.Thecomponentishousedinat

IRF352

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

IRF352

N-ChannelPowerMOSFETs,15A,350V/400V

IRF352

iscN-ChannelMOSFETTransistor

DESCRIPTION •siliconGateforfastswitchingatelevate •rugged APPLICATIONS •highvoltage,highspeedapplicationssuchasoff-lineSwitchingpowersupplies,ACandDCmotorcontrolsrelayandsolenoiddriver.

IRF352

N-CHANNELPOWERMOSFETS