FDMT80060DC中文资料安森美半导体数据手册PDF规格书

General Description

This N−Channel MOSFET is produced using onsemi’s advanced

POWERTRENCH process. Advancements in both silicon and

DUAL COOL package technologies have been combined to offer

the lowest rDS(on) while maintaining excellent switching performance

by extremely low Junction−to−Ambient thermal resistance.

特性 Features

• Max rDS(on) = 1.1 m at VGS = 10 V, ID = 43 A

• Max rDS(on) = 1.3 m at VGS = 8 V, ID = 37 A

• Advanced Package and Silicon Combination for Low rDS(on)

and High Efficiency

• Next Generation Enhanced Body Diode Technology,

Engineered for Soft Recovery

• Low Profile 8x8 mm MLP Package

• MSL1 Robust Package Design

• 100 UIL Tested

• This Device is Pb−Free, Halide Free and RoHS Compliant

Applications

• OringFET / Load Switching

• Synchronous Rectification

• DC−DC Conversion