FDME1034CZT中文资料仙童半导体数据手册PDF规格书

General Description

This device is designed specifically as a single package solution for a DC/DC ‘Switching’ MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device.

特性 Features

Q1: N-Channel

■ Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A

■ Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A

■ Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A

■ Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A

Q2: P-Channel

■ Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A

■ Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A

■ Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A

■ Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A

■ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin

■ Free from halogenated compounds and antimony oxides

■ HBM ESD protection level > 1600 V (Note 3)

■ RoHS Compliant

Applications

■ DC-DC Conversion

■ Level Shifted Load Switch