FDMC86262P中文资料安森美半导体数据手册PDF规格书

General Description

This P−Channel MOSFET is produced using onsemi’s advanced

POWERTRENCH technology. This very high density process is

especially tailored to minimize on−state resistance and optimized for

superior switching performance.

特性 Features

• Max rDS(on) = 307 m at VGS = −10 V, ID = −2 A

• Max rDS(on) = 356 m at VGS = −6 V, ID = −1.8 A

• Very Low rDS(on) Mid Voltage P−Channel Silicon Technology

Optimised for Low Qg

• Optimised for Fast Switching Applications as Well as Load Switch

Applications

• 100% UIL Tested

• This Device is Pb−Free, Halide Free and is ROHS Compliant

Applications

• Active Clamp Switch

• Load Switch