订购数量 | 价格 |
---|---|
1+ |
FDG6306P_ONSEMI/安森美半导体_MOSFET P-Ch PowerTrench Specified 2.5V创新迹电子商
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号
:FDG6306P
- Pb-free
:Pb
- Halide free
:H
- Status
:Active
- Channel Polarity
:P-Channel
- Configuration
:Dual
- V(BR)DSS Min (V)
:-20
- VGS Max (V)
:12
- VGS(th) Max (V)
:-1.5
- ID Max (A)
:-0.6
- PD Max (W)
:0.3
- RDS(on) Max @ VGS = 2.5 V(mΩ)
:Q1=Q2=630
- RDS(on) Max @ VGS = 4.5 V(mΩ)
:Q1=Q2=420
- RDS(on) Max @ VGS = 10 V(mΩ)
:-
- Qg Typ @ VGS = 4.5 V (nC)
:1.7
- Qg Typ @ VGS = 10 V (nC)
:1.4
- Ciss Typ (pF)
:114
- Package Type
:SC-88-6/SC-70-6/SOT-363-6
供应商
相近型号
- FDG6316P
- FDG6302P
- FDG6316PMOS
- FDG6301N-NL
- FDG6316P-NL
- FDG6301N-F085
- FDG6301N_F085
- FDG6317NZ
- FDG6317NZMOS
- FDG6301N
- FDG6317NZ-NL
- FDG6318P
- FDG410NZ
- FDG361N
- FDG6318PZ
- FDG6320C
- FDG6320C-NL
- FDG332PZMOS
- FDG332PZ
- FDG6321C
- FDG6321C(S)
- FDG6321C-F169
- FDG330P
- FDG6322C
- FDG329N
- FDG6322C-NL
- FDG6323L
- FDG328P
- FDG6323L-TP
- FDG327NZ
- FDG327N
- FDG6324
- FDG6324L
- FDG326P
- FDG6331L
- FDG6332C
- FDG316P
- FDG6332C_F085
- FDG6332C-F085
- FDG315N
- FDG314P
- FDG313N
- FDG6335N
- FDG6342L
- FDG312P
- FDG8842CZ
- FDG311N
- FDG1024NZ
- FDG8842CZ-NL
- FDG1024N