FDFMA2P859T中文资料仙童半导体数据手册PDF规格书

General Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.

The MicroFET 2x2 Thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

特性 Features

MOSFET:

■ Max rDS(on) = 120 m at VGS = –4.5 V, ID = –3.0 A

■ Max rDS(on) = 160 m at VGS = –2.5 V, ID = –2.5 A

■ Max rDS(on) = 240 m at VGS = –1.8 V, ID = –1.0 A

Schottky:

■ VF < 0.54 V @ 1 A

■ Low profile - 0.55 mm maximum - in the new package MicroFET 2x2 Thin

■ Free from halogenated compounds and antimony oxides

■ RoHS compliant