订购数量 | 价格 |
---|---|
1+ |
FDC658P_ONSEMI/安森美半导体_MOSFET SSOT-6 P-CH -30V河锋鑫商城
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
FDC658P
- 功能描述:
MOSFET SSOT-6 P-CH -30V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
相近型号
- FDC6561AN
- FDC8602
- FDC655BNMOS
- FDC86244
- FDC655BN-F40
- FDC655BN_NL
- FDC8878
- FDC655BN
- FDC8884
- FDC655AN
- FDC8886
- FDC654P
- FDCW18T120
- FDD03-0505D4A
- FDC653N
- FDD03-05S2
- FDD03-05S4
- FDC6506P
- FDD03-05S4A
- FDD03-05S5
- FDC645N
- FDD03-05S5A
- FDC6432SH-NL
- FDD03-12S2
- FDC6432SH
- FDD03-15D4
- FDD03-9733
- FDC642PMOS
- FDD044AN03L
- FDC642P-F085P
- FDD050N03B
- FDC642P-F085
- FDD0655
- FDC642P_F085
- FDC642P
- FDD0657
- FDC6420C-NL
- FDD068AN03L
- FDC6420C
- FDD10AN06A0
- FDD10AN06A0-F085
- FDC640P
- FDD10AN06AO
- FDC6401N-NL
- FDD10N20LZ
- FDC6401N
- FDD10N20LZTM
- FDC6392S
- FDD120AN15A0
- FDC638P-NL