首页 >FDC2612MOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
200VN-ChannelPowerTrenchMOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed. Features •4.9A,2 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.9A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=720mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channelEnhancementModePowerMOSFET Features VDS=200V,ID=8A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
N-ChannelMOSFET200V,6.0A,0.65Q Features ©Vos=200v +o=60A +Rosin50650@Ves=10V. | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | TECHPUBLIC | ||
20VN-ChannelMOSFETs | FS First Silicon Co., Ltd | FS | ||
SiliconStandardRecoveryDiode | GENESIC GeneSiC Semiconductor, Inc. | GENESIC | ||
SiliconStandardRecoveryDiode | GENESIC GeneSiC Semiconductor, Inc. | GENESIC | ||
SiliconStandardRecoveryDiode | GENESIC GeneSiC Semiconductor, Inc. | GENESIC | ||
SiliconStandardRecoveryDiode | GENESIC GeneSiC Semiconductor, Inc. | GENESIC | ||
Electro-MagneticSoundGenerators | JLWORLD JL World Company Limited. | JLWORLD |
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