FDB20N50F中文资料仙童半导体数据手册PDF规格书

描述 Description

SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFETII MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.

特性 Features

• 650 V @TJ = 150°C

• Max. RDS(on) = 380 mΩ

• Ultra Low Gate Charge ( Typ. Qg = 34 nC)

• Low Effective Output Capacitance ( Typ. Coss.eff = 97 pF)

• 100 Avalanche Tested

Applications

• LCD / LED / PDP TV Lighting

• Solar Inverter

• AC-DC Power Supply