isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 64A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 34mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

N-Channel UltraFET Trench MOSFET 250V, 64A, 34m廓

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel UltraFET Trench MOSFET 250V, 64A, 34mΩ

ONSEMI

安森美半导体

OPTICALLY ISOLATED ERROR AMPLIFIER

Introduction The arm wrestling between voice and data has concluded in favor of the latter with all the major players now posturing for leadership of the migration from traditional voice to Internet Protocol (IP) telephony. On the short term the huge investments in both traditional telephony in

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Power Conversion for the Data Communications Market

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Optically Isolated Error Amplifier

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司