FDA032N08MOS(场效应管)中文资料下载贸易商-114ic电子网

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FDA032N08	文件：316.78 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.2mΩ(Max)@VGS=10V DESCRIPTION ·MotorDrive,DC-DCConverter,PowerSwitch andSolenoidDrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FDA032N08	文件：552.79 Kbytes Page：8 Pages	N-ChannelPowerTrench짰MOSFET75V,235A,3.2m廓	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDP032N08	文件：624.32 Kbytes Page：8 Pages	N-ChannelPowerTrench짰MOSFET75V,235A,3.2m廓	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDP032N08	文件：331.82 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=235A@TC=25℃ ·DrainSourceVoltage :VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.2mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
KSM032N08	文件：1.87092 Mbytes Page：7 Pages	N-ChannelMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

更多FDA032N08MOS(场效应管)供应商更新时间2024-9-24 14:01:00