首页 >FDA032N08MOS()>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.2mΩ(Max)@VGS=10V DESCRIPTION ·MotorDrive,DC-DCConverter,PowerSwitch andSolenoidDrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerTrench짰MOSFET75V,235A,3.2m廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelPowerTrench짰MOSFET75V,235A,3.2m廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=235A@TC=25℃ ·DrainSourceVoltage :VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.2mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
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