FCPF190N60E-F154中文资料安森美半导体数据手册PDF规格书

厂商型号	FCPF190N60E-F154
功能描述	MOSFET – N-Channel, SUPERFET II 600 V, 20.6 A, 190 m
丝印标识	FCPF190N60E
封装外壳	TO-220F
文件大小	254.7 Kbytes
页面数量	10 页
生产厂商	ON Semiconductor
企业简称	ONSEMI【安森美半导体】
中文名称	安森美半导体公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-29 22:39:00
人工找货	FCPF190N60E-F154价格和库存，欢迎联系客服免费人工找货

Description

SUPERFET II MOSFET is ON Semiconductor’s brand−new high

voltage super−junction (SJ) MOSFET family that is utilizing charge

balance technology for outstanding low on−resistance and lower gate

charge performance. This technology is tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SUPERFET II MOSFET Easy drive series helps

manage EMI issues and allows for easier design implementation.

Features

• 650 V @ TJ = 150°C

• Typ. RDS(on) = 160 m

• Ultra Low Gate Charge (Typ. Qg = 63 nC)

• Low Effective Output Capacitance (Typ. Coss.eff = 178 pF)

• 100 Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Computing / Display Power Supplies

• Telecom / Server Power Supplies

• Industrial Power Supplies

• Lighting / Charger / Adapter