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FCA36N60NF

N-ChannelMOSFET,FRFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCA36N60NF

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=34.9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=95mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCB36N60N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=36A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=90mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCB36N60N

N-ChannelSupreMOS짰MOSFET600V,36A,90m廓

Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCB36N60N

N-ChannelSupreMOS짰MOSFET600V,36A,90m廓

Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCB36N60NTM

N-ChannelSupreMOS짰MOSFET600V,36A,90m廓

Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP36N60N

N-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP36N60N

AC-DCPowerSupply

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP36N60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCPF36N60NT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=36A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=90mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCPF36N60NT

AC-DCPowerSupply

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IXFH36N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=190mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH36N60P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFK36N60

HiPerFETPowerMOSFET

HiPerFET™PowerMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeet UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpol

IXYS

IXYS Integrated Circuits Division

IXFK36N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK36N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK36N60P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFN36N60

HiPerFETPowerMOSFET

HiPerFET™PowerMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeet UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpol

IXYS

IXYS Integrated Circuits Division

IXFR36N60P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFT36N60P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Integrated Circuits Division

供应商型号品牌批号封装库存备注价格
ON/安森美
21+ROHS
TO-3P-3L
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
FAIRCHILD/仙童
23+
NA/
200
优势代理渠道,原装正品,可全系列订货开增值税票
询价
FAIRCHILD/仙童
23+
TO-247
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
2022+
TO-3P
79999
询价
TE
23+
NA
10450
通孔式电阻器
询价
TE Connectivity Aerospace
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
询价
TE Connectivity Aerospace, Def
24+
FCA-410-1506L=M83536/15-006L
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
TE Connectivity(美国泰科)
23+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
TEConnectivity
5
全新原装 货期两周
询价
TE Connectivity
2022+
1
全新原装 货期两周
询价
更多FCA36N60NFFETIGBTIC供应商 更新时间2024-4-28 15:49:00