| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
RadiationHardenedOctalBuffer/LineDriver,Three-State Description TheIntersilHCTS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCTS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/ | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si)/s •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si)/s •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Description TheIntersilHCTS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCTS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/ | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Description TheIntersilHCTS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCTS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/ | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si)/s •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Intersil‘sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Description TheIntersilHCTS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCTS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/ | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si)/s •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Intersil‘sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
GaAsHEMTMMICLOWNOISEAMPLIFIER,24-40GHz | Hittite HITTITE | Hittite | ||
ACTIVEBIASCONTROLLER GeneralDescription HMC981isanactivebiascontrollerthatautomaticallyadjuststhegatevoltageofanexternalamplifiertoachieveconstantbiascurrent.ItcanbeusedtobiasanyenhancementanddepletiontypeamplifiersoperatinginClass-AregimewithDrainvoltagesfrom4Vto12Vanddr | Hittite HITTITE | Hittite | ||
GaAsHEMTMMICLOWNOISEAMPLIFIER,24-40GHz GeneralDescription TheHMC-ALH244isatwostageGaAsMMICHEMTLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides12dBofgain,anoisefigureof3.5dB,andrequiresonly45mAfroma+4Vsupplyvoltage.TheHMC-ALH244amplifierdieisidealforintegrati | Hittite HITTITE | Hittite | ||
GaAsHEMTMMICLOWNOISEAMPLIFIER GeneralDescription TheHMC-ALH244isatwostageGaAsMMICHEMTLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides12dBofgain,anoisefigureof3.5dB,andrequiresonly45mAfroma+4Vsupplyvoltage.TheHMC-ALH244amplifierdieisidealforintegrati | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
StaticDrain-SourceOn-Resistance | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
14Aand13A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
PowerMOSFET(Vdss=250V,Rds(on)=0.28ohm,Id=15A) DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
15Aand14A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=15A@TC=25℃ •DrainSourceVoltage- :VDSS=250V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.28Ω(Max) •FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号：
FC244Y
- 功能描述：
Analog IC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FCI |
2020+ |
(BGA) |
2878 |
全新原装现货库存,超低价清仓! |
询价 | ||
FCI |
2022+ |
2449 |
全新原装 货期两周 |
询价 | |||
DN |
2018+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
询价 | ||
DN |
23+ |
QFN |
5 |
大批量供应优势库存热卖 |
询价 | ||
FCI |
2022 |
QFNPB |
2058 |
原厂原装正品,价格超越代理 |
询价 | ||
FCI |
2016+ |
PBF |
5632 |
只做进口原装正品!现货或者订货一周货期!只要要网上有 |
询价 | ||
FCI |
13+ |
smd |
16238 |
原装分销 |
询价 | ||
FCI |
17+ |
QFN32 |
9800 |
只做全新进口原装,现货库存 |
询价 | ||
MAXIM |
23+ |
DIP |
12000 |
全新原装假一赔十 |
询价 | ||
FCI |
22+ |
QFN-32 |
40883 |
原装正品现货 |
询价 |
相关规格书
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相关库存
更多- FC24600-S
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- FC25B
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- FC2SA-24-10AS
- FC2X3LG2
- FC2XN-12-10AF
- FC-30
- FC-30001-000
